Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal

Takeshi MIYAJIMA; Norihito TOKURA; Atsuo FUKUMOTO; Hidemitsu HAYASHI; Kunihiko HARA

doi:https://doi.org/10.7567/SSDM.1995.PD-3-13

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PD-3-13] Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal

Takeshi MIYAJIMA、Norihito TOKURA、Atsuo FUKUMOTO、Hidemitsu HAYASHI、Kunihiko HARA (1.Research Laboratories, Nippondenso Co., Ltd.、2.Toyota Central Research & Development Laboratories, Inc.)

https://doi.org/10.7567/SSDM.1995.PD-3-13

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