Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal

Takeshi MIYAJIMA; Norihito TOKURA; Atsuo FUKUMOTO; Hidemitsu HAYASHI; Kunihiko HARA

doi:https://doi.org/10.7567/SSDM.1995.PD-3-13

[PD-3-13] Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal

Takeshi MIYAJIMA, Norihito TOKURA, Atsuo FUKUMOTO, Hidemitsu HAYASHI, Kunihiko HARA (1.Research Laboratories, Nippondenso Co., Ltd., 2.Toyota Central Research & Development Laboratories, Inc.)

https://doi.org/10.7567/SSDM.1995.PD-3-13

1995 International Conference on Solid State Devices and Materials

[PD-3-13] Nitrogen Ion Implantation and Thermal Annealing in SiC Single Crystal