[PD-3-16] Simple Kinetic Model of ECR-RIBE Reacor for the Optimization of GaAs Etching Process

M. Sugiyama、T. Yamaizumi、M. Nezuka、Y. Shimogaki、Y. Nakano、K. Tada、H. Komiyama (1.Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo、2.Department of Electronic Engineering, Faculty of Engineering, University of Tokyo、3.Plasma System Corporation)

https://doi.org/10.7567/SSDM.1995.PD-3-16