[PD-L1-L2] Effects of Implanted Dopants in the LDD Region on the Short Channel Effect of a Deep Sub-Micron MOS Device

B. J. Koo, D. J. Jung, J. W. Park, N. S. Kang, T. E. Shim, M. Y. Lee (1.Basic Research Team, Memory Device Business, Samsung Electronics, Co.)

https://doi.org/10.7567/SSDM.1995.PD-L1-L2