[PD-L1-L2] Effects of Implanted Dopants in the LDD Region on the Short Channel Effect of a Deep Sub-Micron MOS Device

B. J. Koo、D. J. Jung、J. W. Park、N. S. Kang、T. E. Shim、M. Y. Lee (1.Basic Research Team, Memory Device Business, Samsung Electronics, Co.)

https://doi.org/10.7567/SSDM.1995.PD-L1-L2