[PD-L1-L3] A High Performance p-Channel Transistor: β-MOS FET

Kanji Yoh、Ryouji Koizumi、Naotaka Hashimoto、Shuji Ikeda (1.Research Center for Interface Quantum Electronics, Hokkaido University、2.Semiconductor & Integrated Circuits Division, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1995.PD-L1-L3