[PD-L1-L6] New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering

B. Mizuno, H. Nakaoka, M. Takase, A. Hori, I. Nakayama, M. Ogura (1.Semiconductor Research Center and Production Engineering Lab, Matsushita Electric Industrial, Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.PD-L1-L6