New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering

B. Mizuno; H. Nakaoka; M. Takase; A. Hori; I. Nakayama; M. Ogura

doi:https://doi.org/10.7567/SSDM.1995.PD-L1-L6

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[PD-L1-L6] New Methods for ultra-Shallow Boron Doping by Using Plasma, Plasma-Less and Sputtering

B. Mizuno、H. Nakaoka、M. Takase、A. Hori、I. Nakayama、M. Ogura (1.Semiconductor Research Center and Production Engineering Lab, Matsushita Electric Industrial, Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.PD-L1-L6

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