[PD-L2-L6] The Application of CVD SiO2 and PECVD Si3N4 in Fabrication and Passivation of Long-Wavelength HgCdTe Photodiode Arrays

V. M. Emeksuzyan, L. N. Romashko, G. Y. Saleeva, T. I. Zakharyash, N. Kh. Talipov, V. V. Vasil'ev, V. N. Ovsyuk (1.Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences)

https://doi.org/10.7567/SSDM.1995.PD-L2-L6