[S-I-2-1] Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method

Takeshi KANASHIMA、Masanori OKUYAMA、Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science Osaka University)

https://doi.org/10.7567/SSDM.1995.S-I-2-1