Low-Temperature CVD of SiO2 by Alkoxy-Silane-Iso-Cyanate

Yasutaka UCHIDA; Shu TAKEI; Masakiyo MATSUMURA

doi:https://doi.org/10.7567/SSDM.1995.S-I-4-4

1995 International Conference on Solid State Devices and Materials

1995年8月21日〜 1995年8月24日
International House, Osaka, Japan

[S-I-4-4] Low-Temperature CVD of SiO2 by Alkoxy-Silane-Iso-Cyanate

Yasutaka UCHIDA、Shu TAKEI、Masakiyo MATSUMURA (1.Department of Electronics and Information Sciences, Nishi-Tokyo Univ.、2.Department of Physical Electronics, Tokyo Inst. of Technology)

https://doi.org/10.7567/SSDM.1995.S-I-4-4

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