Preparation of Low Dielectric Constant F-Doped SiO2 Films by PECVD

SangWoo LIM; Yukihiro SHIMOGAKI; Yoshiaki NAKANO; Kunio TADA; Hiroshi KOMIYAMA

doi:https://doi.org/10.7567/SSDM.1995.S-I-5-4

[S-I-5-4] Preparation of Low Dielectric Constant F-Doped SiO2 Films by PECVD

SangWoo LIM, Yukihiro SHIMOGAKI, Yoshiaki NAKANO, Kunio TADA, Hiroshi KOMIYAMA (1.Department of Chemical System Engineering, Faculty of Engineering, University of Tokyo, 2.Department of Electronic Engineering, Faculty of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.1995.S-I-5-4

1995 International Conference on Solid State Devices and Materials

[S-I-5-4] Preparation of Low Dielectric Constant F-Doped SiO2 Films by PECVD