High Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas

Y. Kobayashi; Y. Chinzei; H. Asanome; R. Kurosaki; J. Kikuchi; S. Shingubara; Y. Horiike

doi:https://doi.org/10.7567/SSDM.1995.S-I-6-3

[S-I-6-3] High Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas

Y. Kobayashi、Y. Chinzei、H. Asanome、R. Kurosaki、J. Kikuchi、S. Shingubara、Y. Horiike (1.Dept. of Electrical & Electronics Eng. Toyo Univ.、2.Central Laboratory, Toshiba Machine. Corp.、3.Process Fabric. Dev. Fujitsu Corp.、4.Dept. of Electrical Eng. Hiroshima Univ.)

https://doi.org/10.7567/SSDM.1995.S-I-6-3

1995 International Conference on Solid State Devices and Materials

[S-I-6-3] High Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas