[S-I-8-3] Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO2 Gate Dielectrics

B. W. Min、L. K. Han、M. Bhat、T. H. Cho、A. B. Joshi、R. Mann、L. Chung、D. L. Kwong (1.Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Science & Engineering The University of Texas at Austin、2.Rockwell Telecommunications)

https://doi.org/10.7567/SSDM.1995.S-I-8-3