[S-I-8-3] Superior Immunity to the Effects of Plasma-Induced Charging Damage on the Hot-Carrier Reliability of MOSFET's with NO-nitrided SiO2 Gate Dielectrics

B. W. Min, L. K. Han, M. Bhat, T. H. Cho, A. B. Joshi, R. Mann, L. Chung, D. L. Kwong (1.Microelectronics Research Center Department of Electrical & Computer Engineering and Materials Science & Engineering The University of Texas at Austin, 2.Rockwell Telecommunications)

https://doi.org/10.7567/SSDM.1995.S-I-8-3