A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy

W. S. LAU; K. K. KHAW; N. P. SANDLER

doi:https://doi.org/10.7567/SSDM.1995.S-I-9-5

[S-I-9-5] A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy

W. S. LAU、K. K. KHAW、N. P. SANDLER (1.Department of Electrical Engineering, National University of Singapore、2.Lam Research Corporation, CVD Division)

https://doi.org/10.7567/SSDM.1995.S-I-9-5

1995 International Conference on Solid State Devices and Materials

[S-I-9-5] A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy