[S-III-2] Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs

A. Nishiyama, O. Arisumi, M. Terauchi, M. Yoshimi, S. Takeno, K. Suzuki (1.ULSI Research Laboratories, R & D Center, Toshiba Corp., 2.Environmental Engineering Laboratory, R & D Center, Toshiba Corp.)

https://doi.org/10.7567/SSDM.1995.S-III-2