[S-III-2] Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs

A. Nishiyama、O. Arisumi、M. Terauchi、M. Yoshimi、S. Takeno、K. Suzuki (1.ULSI Research Laboratories, R & D Center, Toshiba Corp.、2.Environmental Engineering Laboratory, R & D Center, Toshiba Corp.)

https://doi.org/10.7567/SSDM.1995.S-III-2