[S-III-4] Improvement of Breakdown Voltage in SOI MOSFET Using Gate-Recess (GR) Structure
Jin-Hyeok Choi, Young-June Park, Hong-Shick Min
(1.Dept. of Electronics Eng. and Inter-University Semiconductor Research Center Seoul National University)
https://doi.org/10.7567/SSDM.1995.S-III-4