[S-III-4] Improvement of Breakdown Voltage in SOI MOSFET Using Gate-Recess (GR) Structure

Jin-Hyeok Choi、Young-June Park、Hong-Shick Min (1.Dept. of Electronics Eng. and Inter-University Semiconductor Research Center Seoul National University)

https://doi.org/10.7567/SSDM.1995.S-III-4