Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

H. Kotaki; M. Nakano; S. Hayashida; T. Matsuoka; S. Kakimoto; A. Nakano; K. Uda; Y. Sato

doi:https://doi.org/10.7567/SSDM.1995.S-IV-6

[S-IV-6] Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

H. Kotaki, M. Nakano, S. Hayashida, T. Matsuoka, S. Kakimoto, A. Nakano, K. Uda, Y. Sato (1.Central Research Laboratories, Sharp Corporation, 2.Analysis Center, (IC) Group, Sharp Corporation)

https://doi.org/10.7567/SSDM.1995.S-IV-6

1995 International Conference on Solid State Devices and Materials

[S-IV-6] Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)