Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

H. Kotaki; M. Nakano; S. Hayashida; T. Matsuoka; S. Kakimoto; A. Nakano; K. Uda; Y. Sato

doi:https://doi.org/10.7567/SSDM.1995.S-IV-6

[S-IV-6] Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)

H. Kotaki、M. Nakano、S. Hayashida、T. Matsuoka、S. Kakimoto、A. Nakano、K. Uda、Y. Sato (1.Central Research Laboratories, Sharp Corporation、2.Analysis Center, (IC) Group, Sharp Corporation)

https://doi.org/10.7567/SSDM.1995.S-IV-6

1995 International Conference on Solid State Devices and Materials

[S-IV-6] Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)