Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma

I. S. Park; M. Yoon; H. -D. Lee; C. S. Park; Y. J. Wee; G. H. Choi; K. Y. Oh; S. I. Lee; M. Y. Lee

doi:https://doi.org/10.7567/SSDM.1995.S-IV-7

1995 International Conference on Solid State Devices and Materials

Aug 21, 1995 - Aug 24, 1995
International House, Osaka, Japan

[S-IV-7] Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma

I. S. Park, M. Yoon, H. -D. Lee, C. S. Park, Y. J. Wee, G. H. Choi, K. Y. Oh, S. I. Lee, M. Y. Lee (1.Semiconductor R&D center, Samsung Electronics, Co. Ltd.)

https://doi.org/10.7567/SSDM.1995.S-IV-7

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