[S-IV-7] Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma

I. S. Park、M. Yoon、H. -D. Lee、C. S. Park、Y. J. Wee、G. H. Choi、K. Y. Oh、S. I. Lee、M. Y. Lee (1.Semiconductor R&D center, Samsung Electronics, Co. Ltd.)

https://doi.org/10.7567/SSDM.1995.S-IV-7