In Situ Study of Electromigration in Submicron-Wide Layered Al-0.5%Cu Lines by Side-View TEM Observation

Hidekazu OKABAYASHI; Masao KOMATSU; Hirotaro MORI

doi:https://doi.org/10.7567/SSDM.1995.S-IV-8

[S-IV-8] In Situ Study of Electromigration in Submicron-Wide Layered Al-0.5%Cu Lines by Side-View TEM Observation

Hidekazu OKABAYASHI、Masao KOMATSU、Hirotaro MORI (1.Research and Development Group, NEC Corp.、2.Research Center for Ultra-High Voltage Electron Microscopy, Osaka University)

https://doi.org/10.7567/SSDM.1995.S-IV-8

1995 International Conference on Solid State Devices and Materials

[S-IV-8] In Situ Study of Electromigration in Submicron-Wide Layered Al-0.5%Cu Lines by Side-View TEM Observation