[S-V-5] P- Type Conducting ZnSe and ZnSSe by N2-Gas Doping during Molecular Beam Epitaxy

Yuji HISHIDA, Tomoyuki YOSHIE, Katsumi YAGI, Keiichi YODOSHI, Tatsuhiko NIINA (1.Microelectronics Research Center, Sanyo Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1995.S-V-5