[S-VI-2-1] InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Tsuguo Inata, Tatsuya Usuki, Yoshihiro Sugiyama, Naoki Yokoyama, Osamu Wada
(1.Fujitsu Laboratories Ltd.)
https://doi.org/10.7567/SSDM.1995.S-VI-2-1