InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling

[S-VI-2-1] InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling

Atsushi Tackeuchi、Yoshiaki Nakata、Shunichi Muto、Tsuguo Inata、Tatsuya Usuki、Yoshihiro Sugiyama、Naoki Yokoyama、Osamu Wada (1.Fujitsu Laboratories Ltd.)