A New Method for Measurement of Micro Defects near the Surface of Si Wafers--Optical Shallow Defect Analyzer (OSDA)--

Kazuo Takeda; Hidetsugu Ishida; Atsushi Hiraiwa

doi:https://doi.org/10.7567/SSDM.1996.A-6-2

[A-6-2] A New Method for Measurement of Micro Defects near the Surface of Si Wafers--Optical Shallow Defect Analyzer (OSDA)--

Kazuo Takeda, Hidetsugu Ishida, Atsushi Hiraiwa (1.Central Research Lab., Hitachi, Ltd., 2.Semiconductor & Integrated Circuit Division, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1996.A-6-2

1996 International Conference on Solid State Devices and Materials

[A-6-2] A New Method for Measurement of Micro Defects near the Surface of Si Wafers--Optical Shallow Defect Analyzer (OSDA)--