[A-6-4] Spatially Controlled Formation of Atomically Flat Si(001) Surface by Annealing with a Direct Current in UHV

Atsushi ANDO、Kunihiro SAKAMOTO、Kazushi MIKI、Kazuhiko MATSUMOTO、Tunenori SAKAMOTO (1.Electrotechnical Laboratory (ETL))

https://doi.org/10.7567/SSDM.1996.A-6-4