[A-6-6] The Increase of the Native Oxide Thickness of H-Terminated Si Surfaces by Gaseous Contamination in a Clean Room Atmosphere

T. Itoga、H. Kojima、J. Yugami、M. Ohkura (1.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1996.A-6-6