[A-7-3] Room Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Si Doping in Nonplanar Epitaxy

H. Ohnishi、M. Hirai、K. Fujita、T. Watanabe (1.ATR Optical and Radio Communications Research Laboratories)

https://doi.org/10.7567/SSDM.1996.A-7-3