Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer

Yasuhiro DOHMAE; Satoshi SUZUKI; Tamotsu HASHIZUME; Hideki HASEGAWA

doi:https://doi.org/10.7567/SSDM.1996.AB-2-2

[AB-2-2] Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer

Yasuhiro DOHMAE、Satoshi SUZUKI、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.AB-2-2

1996 International Conference on Solid State Devices and Materials

[AB-2-2] Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer