The Japan Society of Applied Physics

[AB-2-2] Novel Insulated Gate InGaAs HEMT Technology Using Silicon Interface Control Layer

Yasuhiro DOHMAE、Satoshi SUZUKI、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.AB-2-2