[B-2-3] Low Temperature Epitaxy of Si and SiGe by the Novel Centrifugal LPE Technique

Mitsuharu KONUMA (1.Max-Planck-Institut fur Festkorperforschung Max-Planck-Institut fur Metallforschung)

https://doi.org/10.7567/SSDM.1996.B-2-3