A Proposed Atomic-Layer-Deposition of Germanium on Si(100)

Takuya KITAMURA; Satoshi SUGAHARA; Tomonori NAGAI; Yasutaka UCHIDA; Masakiyo MATSUMURA

doi:https://doi.org/10.7567/SSDM.1996.B-2-4

[B-2-4] A Proposed Atomic-Layer-Deposition of Germanium on Si(100)

Takuya KITAMURA, Satoshi SUGAHARA, Tomonori NAGAI, Yasutaka UCHIDA, Masakiyo MATSUMURA (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Department of Electronics and Information Science, Teikyo University of Science and Technology)

https://doi.org/10.7567/SSDM.1996.B-2-4

1996 International Conference on Solid State Devices and Materials

[B-2-4] A Proposed Atomic-Layer-Deposition of Germanium on Si(100)