[B-3-1] Electronic Interface Properties of Low Temperature Ultrathin Oxides on Si(111) Surfaces Studied by Contactless Capacitance-Voltage and Photoluminescence Methods

Toshiyuki YOSHIDA、Satoshi KOYANAGI、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.B-3-1