[B-3-4] High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO2 Formed in the SiCl4-N2O System

T. Ogata、K. Kobayashi、H. Watanabe、H. Kurokawa、Y. Matsui、M. Hirayama (1.ULSI Laboratory, Mitsubishi Electric Corporation、2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1996.B-3-4