Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash Memory

[B-3-5] Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash Memory

T. Arakawa, R. Matsumoto, T. Hayashi (1.VLSI Research & Development Center and LSI Process Technology Division Oki Electric Industry Co., Ltd.)