[B-3-5] Impact of Nitrogen Distribution in Oxynitride Tunnel Film/Si on Band-to-Band Tunneling Current and Electron Injection in Flash Memory

T. Arakawa、R. Matsumoto、T. Hayashi (1.VLSI Research & Development Center and LSI Process Technology Division Oki Electric Industry Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.B-3-5