Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

Josep L. ALAY; Masataka HIROSE

doi:https://doi.org/10.7567/SSDM.1996.B-4-2

[B-4-2] Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy

Josep L. ALAY、Masataka HIROSE (1.Research Center for Nanodevices and Systems, Hiroshima University、2.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1996.B-4-2

1996 International Conference on Solid State Devices and Materials

[B-4-2] Early Stages of Oxidation of Clean Si(111)-7x7 and Si(100)-2x1 Surfaces Studied by In-Situ High Resolution X-Ray Photoelectron Spectroscopy