[B-5-5] Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N2O-Nitrided O3-Oxide

Yasuyuki TAMURA, Satoshi OHKUBO, Toshiro NAKANISHI, Yoshikazu KATAOKA, Kiyoshi IRINO, Kanetake TAKASAKI (1.Fujitsu Laboratories Ltd., 2.FUJITSU LIMITED)

https://doi.org/10.7567/SSDM.1996.B-5-5