[B-5-5] Suppression of Hot Carrier Degradation in LDD n-MOSFETs with Gate N2O-Nitrided O3-Oxide

Yasuyuki TAMURA、Satoshi OHKUBO、Toshiro NAKANISHI、Yoshikazu KATAOKA、Kiyoshi IRINO、Kanetake TAKASAKI (1.Fujitsu Laboratories Ltd.、2.FUJITSU LIMITED)

https://doi.org/10.7567/SSDM.1996.B-5-5