[B-5-6] Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
Takeshi YOSHIDA、Seiichi MIYAZAKI、Masataka HIROSE
(1.Department of Electrical Engineering, Hiroshima University)
https://doi.org/10.7567/SSDM.1996.B-5-6