[B-5-7] Evaluation of Hot-Hole Induced Interface Traps at the Tunneling SiO2(3.5 nm)-Si Interface by the Conductance Technique

Shigeo OGAWA、Toshio KOBAYASHI、Satoshi NAKAYAMA、Yutaka SAKAKIBARA (1.NTT LSI Laboratories)

https://doi.org/10.7567/SSDM.1996.B-5-7