[C-3-1] Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures

H. Kitabayashi, T. Waho, M. Yamamoto (1.NTT LSI Laboratories)

https://doi.org/10.7567/SSDM.1996.C-3-1