Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

Tamotsu HASHIZUME; Shunsuke SHIOBARA; Hideki HASEGAWA

doi:https://doi.org/10.7567/SSDM.1996.C-4-3

[C-4-3] Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

Tamotsu HASHIZUME、Shunsuke SHIOBARA、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.C-4-3

1996 International Conference on Solid State Devices and Materials

[C-4-3] Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy