The Japan Society of Applied Physics

[C-4-3] Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy

Tamotsu HASHIZUME、Shunsuke SHIOBARA、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.C-4-3