Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers

Shigeharu Matsushita; Daijiro Inoue; Kohji Matsumura; Minoru Sawada; Keiichi Yodoshi; Yasoo Harada

doi:https://doi.org/10.7567/SSDM.1996.C-4-4

[C-4-4] Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers

Shigeharu Matsushita, Daijiro Inoue, Kohji Matsumura, Minoru Sawada, Keiichi Yodoshi, Yasoo Harada (1.Microelectronics Research Center, SANYO Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1996.C-4-4

1996 International Conference on Solid State Devices and Materials

[C-4-4] Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers