[D-2-4] Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism

Teketomo SATO、Shouichi UNO、Tamotsu HASHIZUME、Hideki HASEGAWA (1.Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1996.D-2-4