FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure

Naoyuki SHINMURA; Takuji TANIGAMI; Kenji HAKOZAKI; Yukiharu AKIYAMA; Shinichi SATO; Katsuji IGUCHI; Keizo SAKIYAMA

doi:https://doi.org/10.7567/SSDM.1996.D-7-1

[D-7-1] FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure

Naoyuki SHINMURA、Takuji TANIGAMI、Kenji HAKOZAKI、Yukiharu AKIYAMA、Shinichi SATO、Katsuji IGUCHI、Keizo SAKIYAMA (1.VLSI Development Laboratories, IC Tenri Group, SHARP Corporation)

https://doi.org/10.7567/SSDM.1996.D-7-1

1996 International Conference on Solid State Devices and Materials

[D-7-1] FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure